Auger relaxation processes in semiconductor nanocrystals and quantum wells
Identifieur interne : 001C39 ( Main/Exploration ); précédent : 001C38; suivant : 001C40Auger relaxation processes in semiconductor nanocrystals and quantum wells
Auteurs : V. A. Kharchenko [États-Unis] ; M. Rosen [États-Unis]Source :
- Journal of Luminescence [ 0022-2313 ] ; 1996.
English descriptors
- Teeft :
- Angular momentum, Atomic systems, Auger, Auger electron, Auger process, Auger recombination, Auger recombination rate, Auger recombination rates, Auger thermalization rate, Auger transition rate, Bloch functions, Bulk material, Conduction, Conduction band, Coulomb, Coulomb interaction, Coulomb matrix element, Electron wave function, Final momentum, Final state, Final states, Glass matrix, Heavy hole, Hole states, Hole wave functions, Kane, Kane model, Kharchenko, Laser, Luminescence, Luminescence quantum yields, Matrix, Microcrystal, Microcrystals, Momentum conservation, Nanometer, Nonthreshold, Optical recombination, Overlap integrals, Phonon, Phys, Quantum, Quantum dots, Quantum efficiency, Radiative, Radiative recombination, Recombination, Rosen, Semiconductor, Semiconductor quantum dots, Valence, Valence band, Wave function.
Abstract
Abstract: Auger recombination rates in mesoscopic semiconductor structures have been studied as a function of energy band parameters and heterostructure size. It is shown that nonthreshold Auger processes stimulated by the presence of heteroboundaries become the dominant nonradiative recombination channel in nanometer size semiconductor structures. The size dependence of luminescence quantum yields in nanostructures and microcrystals are discussed. Auger-like collisions of electrons and heavy holes are shown to serve as “accelerators” of thermalization processes in semiconductor quantum dots.
Url:
DOI: 10.1016/0022-2313(96)00052-X
Affiliations:
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A." last="Kharchenko">V. A. Kharchenko</name><affiliation wicri:level="2"><country xml:lang="fr">États-Unis</country><wicri:regionArea>Institute for Theoretical Atomic and Molecular Physics, Harvard-Smithsonian Center for Astrophysics, Cambridge, MA 02138</wicri:regionArea><placeName><region type="state">Massachusetts</region></placeName></affiliation></author><author><name sortKey="Rosen, M" sort="Rosen, M" uniqKey="Rosen M" first="M." last="Rosen">M. Rosen</name><affiliation wicri:level="2"><country xml:lang="fr">États-Unis</country><wicri:regionArea>Beam Theory Section, Naval Research Laboratory, Washington, DC 20375</wicri:regionArea><placeName><region type="state">District de Columbia</region></placeName></affiliation></author></analytic><monogr></monogr><series><title level="j">Journal of Luminescence</title><title level="j" type="abbrev">LUMIN</title><idno type="ISSN">0022-2313</idno><imprint><publisher>ELSEVIER</publisher><date type="published" when="1996">1996</date><biblScope unit="volume">70</biblScope><biblScope unit="issue">1–6</biblScope><biblScope unit="page" from="158">158</biblScope><biblScope unit="page" to="169">169</biblScope></imprint><idno type="ISSN">0022-2313</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0022-2313</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="Teeft" xml:lang="en"><term>Angular momentum</term><term>Atomic systems</term><term>Auger</term><term>Auger electron</term><term>Auger process</term><term>Auger recombination</term><term>Auger recombination rate</term><term>Auger recombination rates</term><term>Auger thermalization rate</term><term>Auger transition rate</term><term>Bloch functions</term><term>Bulk material</term><term>Conduction</term><term>Conduction band</term><term>Coulomb</term><term>Coulomb interaction</term><term>Coulomb matrix element</term><term>Electron wave function</term><term>Final momentum</term><term>Final state</term><term>Final states</term><term>Glass matrix</term><term>Heavy hole</term><term>Hole states</term><term>Hole wave functions</term><term>Kane</term><term>Kane model</term><term>Kharchenko</term><term>Laser</term><term>Luminescence</term><term>Luminescence quantum yields</term><term>Matrix</term><term>Microcrystal</term><term>Microcrystals</term><term>Momentum conservation</term><term>Nanometer</term><term>Nonthreshold</term><term>Optical recombination</term><term>Overlap integrals</term><term>Phonon</term><term>Phys</term><term>Quantum</term><term>Quantum dots</term><term>Quantum efficiency</term><term>Radiative</term><term>Radiative recombination</term><term>Recombination</term><term>Rosen</term><term>Semiconductor</term><term>Semiconductor quantum dots</term><term>Valence</term><term>Valence band</term><term>Wave function</term></keywords></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Abstract: Auger recombination rates in mesoscopic semiconductor structures have been studied as a function of energy band parameters and heterostructure size. It is shown that nonthreshold Auger processes stimulated by the presence of heteroboundaries become the dominant nonradiative recombination channel in nanometer size semiconductor structures. The size dependence of luminescence quantum yields in nanostructures and microcrystals are discussed. Auger-like collisions of electrons and heavy holes are shown to serve as “accelerators” of thermalization processes in semiconductor quantum dots.</div></front></TEI><affiliations><list><country><li>États-Unis</li></country><region><li>District de Columbia</li><li>Massachusetts</li></region></list><tree><country name="États-Unis"><region name="Massachusetts"><name sortKey="Kharchenko, V A" sort="Kharchenko, V A" uniqKey="Kharchenko V" first="V. A." last="Kharchenko">V. A. Kharchenko</name></region><name sortKey="Rosen, M" sort="Rosen, M" uniqKey="Rosen M" first="M." last="Rosen">M. Rosen</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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